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UG(F,B)10FCT & UG(F,B)10GCT, BYT28(F,B)-300 & BYT28(F,B)-400
Vishay General Semiconductor
Document Number: 88552
Revision: 06-Nov-07
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
RATINGS AND CHARACTERISTICS CURVES
(TA
= 25 °C unless otherwise noted)
Figure 1. Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
0
5
15
0
50
100
150
10
Resistive or Inductive Load
A
v
erage For
w
ard C
u
rrent (A)
Case Temperature (°C)
1
10
100
1
100
10
TC
= 105 °C
8.3 ms Single Half Sine-Wave
Number of Cycles at 60 Hz
Peak For
w
ard S
u
rge C
u
rrent (A)
100
10
1.0
0.1
0.01
0.2 0.4 0.0.6 1.0 1.28
1.4 1.6 1.8
Pulse Width = 300 μs
1 %
D
uty Cycle
Instantaneous Forward Voltage (V)
Instantaneo
u
s For
w
ard C
u
rrent (A)
TJ
= 100 °C
TJ
= 125 °C
TJ
= 25 °C
Figure 4. Typical Reverse Characteristics Per Diode
Figure 5. Reverse Switching Characteristics Per Diode
Figure 6. Typical Junction Capacitance Per Diode
1.0
10
100
1000
0.1
20
100
40 60
80
Percent of Rated Peak Reverse Voltage (%)
Instantaneo
u
s Re
v
erse C
u
rrent (
μ
A)
TJ
= 100 °C
TJ
= 125 °C
TJ
= 25 °C
0
25 50
20
40
60
80
100
120
75 100 125
Stored Charge/Re
v
erse Reco
v
ery Time
(nC/ns)
Junction Temperature (°C)
trr
Qrr
at 5 A, 50 A/μs
at 2 A, 20 A/μs
at 5 A, 50 A/μs
at 1 A, 100 A/μs
at 2 A, 20 A/μs
10
1
100
10
100
1
0.1
Reverse Voltage (V)
J
u
nction Capaci
tance (pF)
TJ
= 125 °C
f = 1.0 MHz
Vsig
= 50 m
Vp-p
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